Summary
Plasma doping or plasma immersion ion implantation has few drawbacks such as no mass seperation but offers advantages such as high implant current for low energy, fast throughput, simultaneous implantation of whole wafer and 3D doping.
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As mass separation is possible for beamline implantation only desired ions can be implanted.
Since plasma ion doping is not mass analyzed all the positive ions in the plasma including impurities can be implanted.
Plasma doping offers advantages over beamline implantation
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Reference
- Paul K. Chu. (2004). Recent developments and applications of PIII. J. Vac. Sci. Technol. B, Vol.22, No.1
- IBS. A Differentiated Plasma Doping Technology for a wide range of applications. Retrieved from www.semi.org/eu/sites/semi.org/files/docs/IBS_SEMI_May24_12.pdf
- L. Fuller/Rochester Institute of Technology, L. (n.d.). Introduction of ion implantation. Retrieved from https://people.rit.edu/lffeee/IMPLANT.pdf
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