Summary Plasma induced wafer arcing is sensitive to hardware condition as well as wafer surface structure, such as pattern layout, feature density and wafer edge … [Read more...] about Wafer surface structure sensitivity to plasma doping induced arcing
Plasma ion implantation
How to monitor plasma ion implantation process for fault detection?
Summary How to ensure the dose accuracy of the plasma doping or PIII system. What algorithm does the dose controller use to integrate Faraday currents?. How to … [Read more...] about How to monitor plasma ion implantation process for fault detection?
Simple and low cost test wafer for studying plasma induced wafer arcing damage
Summary Wafer arcing is a response to particular wafer surface structure geometry as well as plasma instability. Therefore, the type of wafer surface structure … [Read more...] about Simple and low cost test wafer for studying plasma induced wafer arcing damage
Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control
Summary A method to monitor the plasma doping process quality is to analyze the implant pulses like DC voltage, current and Faraday current waveforms that are … [Read more...] about Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control
Dose accuracy in plasma doping
Summary Unlike Beamline, accurate dose measurement is a big challenge for plasma immersion doping. The simple integration of the faraday current can't accurately … [Read more...] about Dose accuracy in plasma doping
Plasma doping/PIII advantages over beamline implantation
Summary Plasma doping or plasma immersion ion implantation has few drawbacks such as no mass seperation but offers advantages such as high implant current for … [Read more...] about Plasma doping/PIII advantages over beamline implantation