Summary Unlike Beamline, accurate dose measurement is a big challenge for plasma immersion doping. The simple integration of the faraday current can't accurately … [Read more...] about Dose accuracy in plasma doping
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Plasma doping/PIII advantages over beamline implantation
Summary Plasma doping or plasma immersion ion implantation has few drawbacks such as no mass seperation but offers advantages such as high implant current for … [Read more...] about Plasma doping/PIII advantages over beamline implantation
Electrical measurements to characterize semiconductor devices, processes, and reliability using Agilent 4156C parametric analyzers
Summary Semiconductor parameter analyzers have a wide range of electrical measurement capabilities and are used to characterize semiconductor devices, processes, … [Read more...] about Electrical measurements to characterize semiconductor devices, processes, and reliability using Agilent 4156C parametric analyzers
Electrical measurements to characterize semiconductor devices, processes, and reliability using HP 4145B parametric analyzers
Summary This comics are intended to help in understanding the electrical on-wafer measurement for semiconductor device, process and reliability characterization. … [Read more...] about Electrical measurements to characterize semiconductor devices, processes, and reliability using HP 4145B parametric analyzers
Nanofabrication at Harvard CNS : E-beam resist – Ep3
Summary The main criteria for choosing the appropriate resist depend on the minimum feature size, sensitivity, contrast and etching resistance. There is a large … [Read more...] about Nanofabrication at Harvard CNS : E-beam resist – Ep3
E-Beam resist – Nanofabrication at Harvard CNS – Ep2
Summary PMMA and ZEP520 are the most popular positive E-beam resists with high resolution capability. ZEP520 is well-known for high sensitivity and etch … [Read more...] about E-Beam resist – Nanofabrication at Harvard CNS – Ep2
E-Beam Lithography Resists (2)- 하버드대 CNS 나노팹에서 소자제조 – 3화
Summary E-beam resist를 선택할때 중요하게 고려할 사항들은 contrast, sensitivity, resolution, etch resistance이다. EBL에 영향을 미치는 많은 매개 변수들은 서로간에 복잡하게 영향을 주기때문에 성공적인 Electron beam … [Read more...] about E-Beam Lithography Resists (2)- 하버드대 CNS 나노팹에서 소자제조 – 3화
E-Beam Resist – 하버드대 CNS 나노팹에서 소자제조 – 2화
Summary 전자빔 리소그래피에서 널리 사용되는 감광제인 PMMA와 ZEP520A 특성을 비교해보자. 어떤 감광제를 사용할지 선택은 제작하고자 하는 소자가 필요하는 공정과 요구조건을 우선 먼저 이해하는게 필요하다. PMMA에 비해 가격이 비싼 ZEP520은 etch … [Read more...] about E-Beam Resist – 하버드대 CNS 나노팹에서 소자제조 – 2화