Summary
Unlike Beamline, accurate dose measurement is a big challenge for plasma immersion doping. The simple integration of the faraday current can't accurately measure the retained dose because it is a complicated function of process condition, surface interactions and surface treatment.
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Plasma doping system is simple but its process is complicated. Any variations in plasma environment and surface interaction affect the implantation quality
The voltage pulse stability is important to ensure the plasma doping quality. The total number of the implant pulse is more than 200K. The acquisition of the whole implant waveforms can provide valuable information about the stability, dosimetry accuracy and etc.
In plasma doping, getting an accurate dose measurement is challenging. It is because the implant dose in plasma doping is a complicated function of inter-related process conditions, surface interactions and post surface treatment
Reference
- Jones, E., & Cheung, N. (1997). Plasma doping dosimetry. IEEE Transactions on Plasma Science, 25(1), 42-52. doi:10.1109/27.557484
- Qin, S. (2014). Plasma doping (PLAD) for advanced memory device manufacturing. 2014 20th International Conference on Ion Implantation Technology (IIT). doi:10.1109/iit.2014.6940017
- Qin, S., & McTeer, A. (2008). Faraday/Ion Mass Spectroscopy Dosimeter for Plasma Immersion Ion Implantation/Plasma Doping Processes of Semiconductor Manufacturing. IEEE Transactions on Plasma Science, 36(3), 828-833. doi:10.1109/tps.2008.923741
- (PDF) Plasma Immersion Ion Implantation (PIII). (n.d.). Retrieved from https://www.researchgate.net/publication/273773633-
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