Summary
A method to monitor the plasma doping process quality is to analyze the implant pulses like DC voltage, current and Faraday current waveforms that are acquired by using high speed data acquisition unit throughout implantation. The analysis of the acquired implant pulses provides the valuable process information about dosimetry accuracy, the stability of voltage pulses, plasma arching, implant dose between pulses and fault conditions.
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A method to monitor the plasma doping dose accuracy is to record the implant pulses
Key parameters extracted from the plasma doping implant pulses include voltage, current and Faraday current waveforms.
High speed data acquisition record the plasma implant pulses. Programming is required to analysis the very large data analysis set.
High speed data acquisition record the plasma implant pulses. Programming is required to analysis the very large data analysis set.
Reference
- Z. Fang, S. Ko (2008). Monitoring plasma ion implantation systems for fault detection and process control. US20080026133A1.
- Shu Qin, Bradley, M., & Kellerman, P. (2003). Faraday dosimetry characteristics of PIII doping processes. IEEE Transactions on Plasma Science, 31(3), 369-376. doi:10.1109/tps.2003.813198
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