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Home / Comics / Nanotechnology / nanofabrication / E-Beam Resist – 하버드대 CNS 나노팹에서 소자제조 – 2화

E-Beam Resist – 하버드대 CNS 나노팹에서 소자제조 – 2화

May 4, 2018 By sky Leave a Comment

Summary

전자빔 리소그래피에서 널리 사용되는 감광제인 PMMA와 ZEP520A 특성을 비교해보자. 어떤 감광제를 사용할지 선택은 제작하고자 하는 소자가 필요하는 공정과 요구조건을 우선 먼저 이해하는게 필요하다. PMMA에 비해 가격이 비싼 ZEP520은 etch resistance가 좋기때문에 etching mask로서 사용한다

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하버드 CNS 나노팹 주차
P1
하버드대 방문시 Parking Permit을 미리받으면 편합니다
하버드 CNS 나노팹 IRIS eye scan등록
P2
Cleanroom을 들어가려면 IRIS eye scan system 등록이 필수
Ebeam resist Zep520A cost process
P3
Ebeam resist Zep520A는 비싸다
Refer to spin curve to determine spin speed for resist coating
P4
Spin speed는 ZEP520A resist spin curve표를 참조할 것
ZEP520A develop process
P5
PMMA는 ZEP520A에 비해서 싸면서도 Resolution이 좋다
ZEP520A resist developer로서 ZED-N50이 쓰인다
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Filed Under: nanofabrication, Nanotechnology Tagged With: E-beam resist, Elecron Beam Lithography Resist, Harvard CNS, PMMA, prototyping, Zep520, 나노팹, 하버드대 CNS

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