E-Beam Lithography Resists (2)- 하버드대 CNS 나노팹에서 소자제조 – 3화

May 11, 2018 By sky Leave a Comment

Summary

E-beam resist를 선택할때 중요하게 고려할 사항들은 contrast, sensitivity, resolution, etch resistance이다. EBL에 영향을 미치는 많은 매개 변수들은 서로간에 복잡하게 영향을 주기때문에 성공적인 Electron beam lithography를 위해서는 Resist 특성을 잘 이해하는게 중요하다

comparison of etch resistance between ZEP520 and PMMA — P1
Four main properties to characterize E-beam resists

how to measure E-beam resist contrast — P2
Contrast(γ) describes how abrupt is the dependence of thickness on dose

E-beam resist sensitivity and writing speed — P3
The higher sensitivity of E-beam resist indicates that the clearance dose is reduced. Therefore, using a more sensitive E-beam resist is a benefit in terms of improving resolution and writing speed

Writing speed and parameters to affect performance of E-beam resists — P4
Using high beam current in EBL limits the minimum feature size due to the space charge blowup but ensures the fast writing speed. Using lower beam current ensures higher resolution but results in slow writing speed.

using higer sensitivity of E-beam resist helps EVL to improve the writing speed — P5
For a fixed beam current using E-beam resist with higher sensitivity improves the writing speed

Select a E-beam ressit suitable for your process and requirement — P6
Suucessful EBL requires understanding about E-beam characteristics and parameters affecting EBL performance. Understanding your process and requirements is required to select a E-beam resist suitable for your application.

Scroll to:
Ep1
Ep2
Ep3

Reference

A E Grigorescu and C W Hagen, Delft University of Technology. “Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art.” Nanotechnology 20 (2009)
Bo Cui, ECE, University of Waterloo; http://ece.uwaterloo.ca/~bcui/, “The electron beam lithography-2”
Mohammad M.A., Muhammad M., Dew S.K., Stepanova M. (2012) Fundamentals of Electron Beam Exposure and Development. In: Stepanova M., Dew S. (eds) Nanofabrication. Springer, Vienna
Nicole Devlin, et al. Georgia Technology. “Dose Determination Using ZEP520A Resist as a Model.”
Georgia Technology. A comparison of electron beam lithography resists PMMA and ZEP520A.”
Zeon Corporation. ZEP520A Technical report.”
Martin M. Greve, Bodil Holst. 2013. “Optimization of an electron beam lithography instrument for fast, large area writing at 10 kV acceleration voltage.” Journal of Vacuum Science & Technology B 31, 043202
Roberto Fallica, et al. Paul Scherrer Institute. “Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography.” Journal of Vacuum Science & Technology B 35, 061603 (2017)

Leave a Reply Cancel reply