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capacitace

3D C-V measurement to detect slow traps

February 2, 2017 By sky Leave a Comment

Summary The 3D C-V technique is a simple method to measure the energy and concentration profile of the slow traps located in the oxide near the Si-SiO 2 … [Read more...] about 3D C-V measurement to detect slow traps

Filed Under: Comics, Implantation, Nanotechnology Tagged With: C-V measurement, capacitace, near interface traps, slow traps

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