Summary In electron beam lithography, any larger pattern than a writing field is subdivided into multiple writing fields. If writing field alignment isn't … [Read more...] about Things to know before doing E-Beam lithography at Harvard CNS: Ep2
Electron beam lithography
Nanofabrication at Harvard CNS : E-beam resist – Ep3
Summary The main criteria for choosing the appropriate resist depend on the minimum feature size, sensitivity, contrast and etching resistance. There is a large … [Read more...] about Nanofabrication at Harvard CNS : E-beam resist – Ep3
E-Beam resist – Nanofabrication at Harvard CNS – Ep2
Summary PMMA and ZEP520 are the most popular positive E-beam resists with high resolution capability. ZEP520 is well-known for high sensitivity and etch … [Read more...] about E-Beam resist – Nanofabrication at Harvard CNS – Ep2
E-Beam Lithography Resists (2)- 하버드대 CNS 나노팹에서 소자제조 – 3화
Summary E-beam resist를 선택할때 중요하게 고려할 사항들은 contrast, sensitivity, resolution, etch resistance이다. EBL에 영향을 미치는 많은 매개 변수들은 서로간에 복잡하게 영향을 주기때문에 성공적인 Electron beam … [Read more...] about E-Beam Lithography Resists (2)- 하버드대 CNS 나노팹에서 소자제조 – 3화