Summary
저항변화를 이용하는 차세대메모리인 STT-MRAM/PCRAM/ReRAM가 개발되고 있는 가운데 DRAM은 새로운 3D power scaling 시대로 나아갈 희망을 갖는다.
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차세대메모리 Big3 : PCRAM, STT-MRAM, ReRAM
차세대메모리는 저항기반 비휘발성 메모리
*Short Channel Effect(단채널 효과): Effects occurred when the channel length of MOSTETs is the same order of magnitude as the depletion-layer widths of the source and drain junction
DRAM은 계속진화할 것
Moore's Law는 3D power scaling으로 변신
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Reference
- Ping Er-Xuan. AMAT. 3D Architecture and Interconnect for Emerging Memory Technologies. SPCC 2016.
- "How new Non Volatile Memories Are Enabling Disruptive Computing Architectures?". Denis Dutoit, CEA-LETI. Flash memory summit, 2017.
- Hutcheson G.D. (2009) The Economic Implications of Moore’s Law. In: Huff H.R. (eds) Into the Nano Era. Springer Series in Materials Science, vol 106. Springer, Berlin, Heidelberg.
- “ITRS Reports.” International Technology Roadmap for Semiconductors, www.itrs2.net/itrs-reports.html.
- "Energy Aware Memory Technology and New Memory System Hierarchy" Frank Koch. Samsung Semiconductor Europe GmbH. 2013.
- "An Overview and Future Challenges of High Density DRAM for 20nm and Beyond." Yoosang Hwang, et al. Samsung. SSDM 2012.
- "Memory Scaling: A Systems Architecture Perspective." Onur Mutlu, Carnegie Mellon University. 2013.
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