Summary
Beam angle information from nanoscale electrical test structure can provide high resolution wafer maps of the horizontal and vertical incident beam angle and angle spread, and beam parallelism across a wafer.
Precise angle control requirements of both horizontal and vertical direction become more stringent with more advanced nodes. Next is about how an implanter controls the incident beam angles as closed-loop method.
It is worthy to note that the above methods are based on bare wafer. Nanoscale device wafer will provide more actual beam angle information.
Related posts:
Ion beam angle uniformity wafer mapping using TW V-curves: Ep1
Ion beam angle uniformity wafer mapping using TW V-curves: Ep2
NI-Diadem for plasma doping process monitoring
Simple and low cost test wafer for studying plasma induced wafer arcing damage
How to monitor plasma ion implantation process for fault detection?
Wafer surface structure sensitivity to plasma doping induced arcing
Leave a Reply