Summary
Beam angle information from nanoscale electrical test structure can provide high resolution wafer maps of the horizontal and vertical incident beam angle and angle spread, and beam parallelism across a wafer.
Precise angle control requirements of both horizontal and vertical direction become more stringent with more advanced nodes. Next is about how an implanter controls the incident beam angles as closed-loop method.
It is worthy to note that the above methods are based on bare wafer. Nanoscale device wafer will provide more actual beam angle information.
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