Summary
Beam angle information from nanoscale electrical test structure can provide high resolution wafer maps of the horizontal and vertical incident beam angle and angle spread, and beam parallelism across a wafer.
![](https://vonoff.com/comics/beam_angle_p1.jpg)
![](https://vonoff.com/comics/beam_angle_p2.jpg)
Precise angle control requirements of both horizontal and vertical direction become more stringent with more advanced nodes. Next is about how an implanter controls the incident beam angles as closed-loop method.
![](https://vonoff.com/comics/beam_angle_p3.jpg)
![](https://localhost/vonoff/comics/beam_angle_p4.jpg)
It is worthy to note that the above methods are based on bare wafer. Nanoscale device wafer will provide more actual beam angle information.
![](https://localhost/vonoff/comics/beam_angle_p5.jpg)
![](https://localhost/vonoff/comics/beam_angle_p6.jpg)
![](https://localhost/vonoff/comics/beam_angle_p7.jpg)
![](https://localhost/vonoff/comics/beam_angle_p8.jpg)
![](https://localhost/vonoff/comics/beam_angle_p9.jpg)
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