Summary
Wafer temperature during implantation has a significant effect on the amorphous layer thickness and EOR damage that affects junction leakage current. Cryogenic implant can minimize the residual damage by increasing the amorthous layer thickness.
Make several dots with different sizes and take area mesasurements of mesa dots to find a leakage density as shown in the next page. Using a microscope image analysis software can provide more accurate area information.
The Shallow Trench Isolation (STI) is the preferred isolation technique but FOX can be used.
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