Summary How to ensure the dose accuracy of the plasma doping or PIII system. What algorithm does the dose controller use to integrate Faraday currents?. How to … [Read more...] about How to monitor plasma ion implantation process for fault detection?
plasma process monitoing
Simple and low cost test wafer for studying plasma induced wafer arcing damage
Summary Wafer arcing is a response to particular wafer surface structure geometry as well as plasma instability. Therefore, the type of wafer surface structure … [Read more...] about Simple and low cost test wafer for studying plasma induced wafer arcing damage
Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control
Summary A method to monitor the plasma doping process quality is to analyze the implant pulses like DC voltage, current and Faraday current waveforms that are … [Read more...] about Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control
NI-Diadem for plasma doping process monitoring
Summary Plasma process monitoring requires high speed data acquisition (>10MS/s) to detect transient changes in short DC voltage and current waveforms. Very … [Read more...] about NI-Diadem for plasma doping process monitoring