Summary Test structure method to probe doping conformality enables the automated measurement of nano-scale sidewall electrical depth profile and provides a wafer … [Read more...] about Conformal Doping Test Structure for PLAD process qualification
Implant damage control and junction leakage measurement
Summary Wafer temperature during implantation has a significant effect on the amorphous layer thickness and EOR damage that affects junction leakage current. … [Read more...] about Implant damage control and junction leakage measurement
Test Structures to measure the Implant Beam Angle for accurate beam control
Summary Beam angle information from nanoscale electrical test structure can provide high resolution wafer maps of the horizontal and vertical incident beam angle … [Read more...] about Test Structures to measure the Implant Beam Angle for accurate beam control