Summary In electron beam lithography, any larger pattern than a writing field is subdivided into multiple writing fields. If writing field alignment isn't … [Read more...] about Things to know before doing E-Beam lithography at Harvard CNS: Ep2
Nanotechnology
Things to know before doing E-Beam lithography at Harvard CNS: Ep1
Summary This comic explains what you need to know before doing electron beam lithography with Elionix systems at Harvard CNS: system, beam spot size, shot pitch, … [Read more...] about Things to know before doing E-Beam lithography at Harvard CNS: Ep1
Ion beam angle uniformity wafer mapping using TW V-curves: Ep2
Summary High resolution micro-uniformity map of ion beam angle is valuable to monitor beam quality control performance of an ion implanter. It provides details … [Read more...] about Ion beam angle uniformity wafer mapping using TW V-curves: Ep2
Ion beam angle uniformity wafer mapping using TW V-curves: Ep1
Summary Thermal Wave(TW) technique can be used to monitor the micro-uniformity beam angle performance in ion implantation. Let's start with TW measurement … [Read more...] about Ion beam angle uniformity wafer mapping using TW V-curves: Ep1
Wafer surface structure sensitivity to plasma doping induced arcing
Summary Plasma induced wafer arcing is sensitive to hardware condition as well as wafer surface structure, such as pattern layout, feature density and wafer edge … [Read more...] about Wafer surface structure sensitivity to plasma doping induced arcing
How to monitor plasma ion implantation process for fault detection?
Summary How to ensure the dose accuracy of the plasma doping or PIII system. What algorithm does the dose controller use to integrate Faraday currents?. How to … [Read more...] about How to monitor plasma ion implantation process for fault detection?
Simple and low cost test wafer for studying plasma induced wafer arcing damage
Summary Wafer arcing is a response to particular wafer surface structure geometry as well as plasma instability. Therefore, the type of wafer surface structure … [Read more...] about Simple and low cost test wafer for studying plasma induced wafer arcing damage
Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control
Summary A method to monitor the plasma doping process quality is to analyze the implant pulses like DC voltage, current and Faraday current waveforms that are … [Read more...] about Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control