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Home / Comics / 기억을 쫓아서-#2 – 새로운 차세대메모리 등장

기억을 쫓아서-#2 – 새로운 차세대메모리 등장

December 1, 2017 By sky Leave a Comment

Summary

차세대메모리가 DRAM과 NAND를 대체할것으로 주목받고 있는데 Intel과 Micron이 공동개발한 새로운 메모리인 3D-Xpoint을 발표한다. 물리적 한계에 직면할 DRAM 마음은 착찹해지는데...

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Universial memory는 DRAM과 NAND 장점을 겸비한 이상적인 메모리
P2
Universial memory는 DRAM과 NAND 장점을 겸비한 이상적인 메모리
univesal memory는 존재하지 않는다
P2
Ideal memory는 노랑코끼리를 찾는것
캐패시터 공정 개선 한계로 인해 미래 성장이 불확실한 DRAM
P3
캐패시터 공정 개선 한계로 인해 미래 성장이 불확실한 DRAM
STT-MRAM이 DRAM을 대체하리라 예상하는데..
P4
시장 분석가들은 STT-MRAM이 DRAM을 대체하리라 예상하고..
새로운 메모리 3D-Xpoint가 등장
P5
새로운 메모리 3D-Xpoint가 등장
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P5
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Reference

  1. "Prospect for New Memory Technology." Park, Sung Wook. Hynix. 2012
  2. “Characterization and Metrology Challenges for Emerging Memory Challenges for Emerging Memory Technology Landscape.” Chandrasekara Naga, et al. Micron. https://www.nist.gov/sites/default/files/documents/pml/div683/conference/chandrasekaran2013.pdf.
  3. “The Real World of Emerging Memories.” Pratt Tom. Micron. http://hpcsociety.org/resources/documents/Micron%20Emerging%20Memories%20042816.pdf.
  4. “Introducing Intel® Optane™ Technology – Bringing 3D XPoint™ Memory to Storage and Memory Products.” Intel Newsroom, newsroom.intel.com/press-kits/introducing-intel-optane-technology-bringing-3d-xpoint-memory-to-storage-and-memory-products/.
  5. Jim, Elliot, and Brennan Bob. “Indu Stry Inno Va Tion with Sam Sung ’s Next Genera Tion V-NAND .” Flash memory summit. 2014, www.flashmemorysummit.com/English/Collaterals/Proceedings/2014/20140805_Keynote2_Samsung.pdf.

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Filed Under: Comics, Memory technology, Nanotechnology Tagged With: 3D-VNAND, 3D-Xpoint, DRAM, DRAM capacitor, DRAM scaling limit, memory, universial memory, 디램, 디램 공정미세화 한계, 메모리

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