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Home / Comics / Things to know before doing E-Beam lithography at Harvard CNS: Ep1

Things to know before doing E-Beam lithography at Harvard CNS: Ep1

October 29, 2018 By sky Leave a Comment

Summary

This comic explains what you need to know before doing electron beam lithography with Elionix systems at Harvard CNS: system, beam spot size, shot pitch, vector scan, and pattern design strategic.

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Elionix ELS-F125 Electron Beam Lithography System at Harvard CNS
P1
There are two Elionix electron Beam Lithography Systems at Harvard CNS: ELS-F125 and 7000
Specification of ELS-F125
P2
The key points of electron optics system and specification of ELS-F125
How to write a pattern with e-beam
P3
How to write a pattern with e-beam and the beam spot size that is dependent on beam current, aperture, acceleration voltage and WD
Find the Ebeam spot size you need by selecting the beam current and the aperture
P4
E-beam current and aperture determine the ebeam spot size. Choose them depending on the feature size that you will write
How to define the shop pitch, also called step size
P5
How to define the shop pitch, also called step size. You first need to set the beam position resolution.
How to set the position resolution and the shot pitch(step size)
P6
How to set the position resolution and the shot pitch(step size)
shot pitch and feature size, scan pitch and feet pitchP7
Make sure to design pattern so that all shapes snap to some multipe of the shot pitch. Otherwise the pattern does not fit to the shot pitch. The X and Y shot pitchs don't need to be the same.
E-beam scan methods: vector scan and raster scan
P8
There are two type of e-beam scan methods to write the pattern: Vector scan and Raster scan.
ebeam deflection within a write field and stitch error with multiple write field
P9
With vector scan there is no stage movement if the pattern is within the write field. The 2D deflector system deflects the beam to control its position of the beam. However, any pattern larger than a sing writing field is divided into multiple fields. The stage has to move to the next after each write field. Thses stage moves gives rise to stitching errors unless the system is well-calibrated.
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Reference

  1. Cen, Shawn W, et al. High-energy Electron Beam Lithography for Nanoscale Fabrication. INTECH Open Access Publisher, 2010.
  2. Chen, ChiiDong. "Advanced Device Fabrication Techniques." Institute of Physics, Academia Sinica. Lecture.
  3. "Elionix Electron Beam Lithography System ELS-G100." Wisconsin Center for Microelectronics (WCAM), UW-Madison College of Engineering, wcam.engr.wisc.edu/Public/Tools/Lithography/Elionix%20ELS-G100%20Operating%20Procedure.pdf.
  4. "Introduction to ebeam Lithography." Materials Research Science and Engineering Center – UW–Madison, mrsec.wiscweb.wisc.edu/wp-content/uploads/sites/282/2018/04/Yong-Sun.pdf.
  5. "Electron-Beam Lithography Training." Welcome | Yale Institute for Nanoscience and Quantum Engineering, nano.yale.edu/book/export/html/213.
  6. "ELIONIX ELECTRON BEAM LITHOGRAPHY SYSTEM ELS-G100." Wisconsin Center for Microelectronics (WCAM), wcam.engr.wisc.edu/Public/Tools/Lithography/Elionix%20ELS-G100%20Operating%20Procedure.pdf.
  7. "EOL JBX-9300FS Electron Beam Lithography System Training." Nanolithography, www.nanolithography.gatech.edu/JEOL_JBX-9300FS_Training.pdf.
  8. "EBeam Basics 1." Washington Nanofabrication Facility, Electron Beam Lithography, ebeam.mff.uw.edu/ebeamweb/doc/exp/exp/exposure_basics_1.html.
  9. "E-beam Lithography." Vor Brodie and Julius Muray ”The Physics of Micro/Nano-Fabrication”, fy.chalmers.se/~yurgens/FKA196/lectures/E-beam%20lithography.pdf.

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Filed Under: Comics, E-beam lithography, Lithography, nanofabrication, Nanotechnology Tagged With: E-Beam lithography, Harvard CNS, nanofabrication

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