Summary
Lithography technology continues to reduce the wavelength to 13.5nm EUV from 193nm ArF today. EUV will print fine pattens below 24nm half-pitch.
Related posts:
Things to know before doing E-Beam lithography at Harvard CNS: Ep1
Test Structures to measure the Implant Beam Angle for accurate beam control
A trip down memory lane -#2: The sorrow of DRAM scaling challenge
A trip down memory lane -#1: Memory to reduce latency gap
Nanofabrication at Harvard CNS : E-beam resist – Ep3
Ion beam angle uniformity wafer mapping using TW V-curves: Ep2
Leave a Reply