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Home / Comics / Nanotechnology / Implantation / Beam angle control / Ion beam angle uniformity wafer mapping using TW V-curves: Ep1

Ion beam angle uniformity wafer mapping using TW V-curves: Ep1

October 3, 2018 By sky Leave a Comment

Summary

Thermal Wave(TW) technique can be used to monitor the micro-uniformity beam angle performance in ion implantation. Let’s start with TW measurement theory

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ion beam angle measurement using thermal wave-p1
P1
CasinoTech: Casino gaming combined with nanotechnology
ion beam angle measurement using thermal wave-p2
P2
The higher the implant dose is, the higher the TW value is
a modulated pump laser beam changes refractive index of implanted sample
P3
TW technique measures the extent of damage created by ion implantation by detecting the sample reflectance variation that is temperature-dependent. The variation is induced by a modulated pump laser beam.
A probe laser measures the change of refractive index induced by a modulated pump laser
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In TW technique, a probe laser measures the change of sample’s refractive index induced by a modulated pump laser
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Reference

  1. “US8817260B2 – Modulated Reflectance Measurement System Using UV Probe.” Google Patents, 26 Aug. 2014, patents.google.com/patent/US8817260B2/en.
  2. Rosencwaig, Allan. “PROCESS CONTROL IN IC MANUFACTURING WITH THERMAL WAVES.” Iowa State University Digital Repository,Therma-Wave Inc.

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Filed Under: Beam angle control, Comics, Implantation, Measurement & Characterization, Nanotechnology Tagged With: beam angle measurement, implantation monitoring, Thermal Wave, TW measurement

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