Summary
Thermal Wave(TW) technique can be used to monitor the micro-uniformity beam angle performance in ion implantation. Let’s start with TW measurement theory
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![ion beam angle measurement using thermal wave-p1](https://vonoff.com/comics/vcurve-p1.jpg)
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![ion beam angle measurement using thermal wave-p2](https://vonoff.com/comics/vcurve-p2.jpg)
The higher the implant dose is, the higher the TW value is
![a modulated pump laser beam changes refractive index of implanted sample](https://vonoff.com/comics/vcurve-p3.jpg)
TW technique measures the extent of damage created by ion implantation by detecting the sample reflectance variation that is temperature-dependent. The variation is induced by a modulated pump laser beam.
![A probe laser measures the change of refractive index induced by a modulated pump laser](https://vonoff.com/comics/vcurve-p4.jpg)
In TW technique, a probe laser measures the change of sample’s refractive index induced by a modulated pump laser
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Reference
- “US8817260B2 – Modulated Reflectance Measurement System Using UV Probe.” Google Patents, 26 Aug. 2014, patents.google.com/patent/US8817260B2/en.
- Rosencwaig, Allan. “PROCESS CONTROL IN IC MANUFACTURING WITH THERMAL WAVES.” Iowa State University Digital Repository,Therma-Wave Inc.
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