Summary
Some development issues related to plasma doping for mass production are plasma uniformity, particle and micro-arcs control.
SkyKo Comics and videos about Semiconductor and nanotechnology | 반도체 만화
Some development issues related to plasma doping for mass production are plasma uniformity, particle and micro-arcs control.
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NI-Diadem for plasma doping process monitoring
Simple and low cost test wafer for studying plasma induced wafer arcing damage
How to monitor plasma ion implantation process for fault detection?
Wafer surface structure sensitivity to plasma doping induced arcing
Ion beam angle uniformity wafer mapping using TW V-curves: Ep1
Ion beam angle uniformity wafer mapping using TW V-curves: Ep2
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