Summary
Some development issues related to plasma doping for mass production are plasma uniformity, particle and micro-arcs control.
Related posts:
Test Structures to measure the Implant Beam Angle for accurate beam control
Implant damage control and junction leakage measurement
NI-Diadem for plasma doping process monitoring
Wafer surface structure sensitivity to plasma doping induced arcing
Ion beam angle uniformity wafer mapping using TW V-curves: Ep1
Ion beam angle uniformity wafer mapping using TW V-curves: Ep2
Leave a Reply