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Ion beam angle uniformity wafer mapping using TW V-curves: Ep2

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Summary

High resolution micro-uniformity map of ion beam angle is valuable to monitor beam quality control performance of an ion implanter. It provides details about within-die and within-wafer angle variations.

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High resolution ion beam angle uniformity wafer mapping in implantation by using thermal wave(TW) V-curves-Ep2-p5
P1
The widely-used method to verify beam angle accuracy is the V-curve using channeling effects
High resolution ion beam angle uniformity wafer mapping in implantation by using thermal wave(TW) V-curves-Ep2-p6
P2
The current V-curve technique involves implanting 3 or 5 wafers at implant tilt angles offset around a theorical channeling angle. The mean of TW measurement each wafer is used to produce the V-curve
High resolution ion beam angle uniformity wafer mapping in implantation by using thermal wave(TW) V-curves-Ep2-p7
P3
It is not efficient to measure a lot of data just to find the mean. Instead, it would be good if each data point can create its own V-curve. This enable us to generate high resolution micro-uniformity map of ion beam angle.
High resolution ion beam angle uniformity wafer mapping in implantation by using thermal wave(TW) V-curves-Ep2-p8
P4
KLA-Tencor TP680XP can perform high resolution TW measurement with a lateral resolution of less than 1.5mm. This allows to achieve micro-uniformity mapping of ion beam angle
High resolution ion beam angle uniformity wafer mapping in implantation by using thermal wave(TW) V-curves-Ep2-p9
P5
The high resolution angle map can identify beam control quality as well as details of within-beam angle variations
High resolution ion beam angle uniformity wafer mapping in implantation by using thermal wave(TW) V-curves-Ep2-p10
P6
Angle information measured with bare wafer or beam control system must be verified through device results that is sensitive to beam angle variations .

Reference

  1. David, Jonathan, and Dennis Kamenitsa. "Angle performance on optima MDxt." 2012.
  2. Zhao, Z. Y. "Ion Implantation Angle Variation to Device Performance and the Control in Production." AIP Conference Proceedings, 2003.
  3. Ninomiya, S., Sasaki, H., Ido, N., Inada, K., Watanabe, K., Kabasawa, M., & Ueno, K. (2014). Precise beam angle control in the S-UHE, SEN's single-wafer ultra-high energy ion implanter. 2014 20th International Conference on Ion Implantation Technology (IIT).

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