Summary Wafer arcing is a response to particular wafer surface structure geometry as well as plasma instability. Therefore, the type of wafer surface structure … [Read more...] about Simple and low cost test wafer for studying plasma induced wafer arcing damage
Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control
Summary A method to monitor the plasma doping process quality is to analyze the implant pulses like DC voltage, current and Faraday current waveforms that are … [Read more...] about Implant pulse parameters to monitor plasma ion implantation systems for fault detection and process control
Dose accuracy in plasma doping
Summary Unlike Beamline, accurate dose measurement is a big challenge for plasma immersion doping. The simple integration of the faraday current can't accurately … [Read more...] about Dose accuracy in plasma doping
Plasma doping/PIII advantages over beamline implantation
Summary Plasma doping or plasma immersion ion implantation has few drawbacks such as no mass seperation but offers advantages such as high implant current for … [Read more...] about Plasma doping/PIII advantages over beamline implantation
Electrical measurements to characterize semiconductor devices, processes, and reliability using Agilent 4156C parametric analyzers
Summary Semiconductor parameter analyzers have a wide range of electrical measurement capabilities and are used to characterize semiconductor devices, processes, … [Read more...] about Electrical measurements to characterize semiconductor devices, processes, and reliability using Agilent 4156C parametric analyzers
Electrical measurements to characterize semiconductor devices, processes, and reliability using HP 4145B parametric analyzers
Summary This comics are intended to help in understanding the electrical on-wafer measurement for semiconductor device, process and reliability characterization. … [Read more...] about Electrical measurements to characterize semiconductor devices, processes, and reliability using HP 4145B parametric analyzers
Nanofabrication at Harvard CNS : E-beam resist – Ep3
Summary The main criteria for choosing the appropriate resist depend on the minimum feature size, sensitivity, contrast and etching resistance. There is a large … [Read more...] about Nanofabrication at Harvard CNS : E-beam resist – Ep3
E-Beam resist – Nanofabrication at Harvard CNS – Ep2
Summary PMMA and ZEP520 are the most popular positive E-beam resists with high resolution capability. ZEP520 is well-known for high sensitivity and etch … [Read more...] about E-Beam resist – Nanofabrication at Harvard CNS – Ep2