Summary
Lithography technology continues to reduce the wavelength to 13.5nm EUV from 193nm ArF today. EUV will print fine pattens below 24nm half-pitch.






SkyKo Comics and videos about Semiconductor and nanotechnology | 반도체 만화
Lithography technology continues to reduce the wavelength to 13.5nm EUV from 193nm ArF today. EUV will print fine pattens below 24nm half-pitch.






Share this post : on Twitter on Facebook on LinkedIn
Share this post : on Twitter on Facebook on LinkedIn
Things to know before doing E-Beam lithography at Harvard CNS: Ep1
A trip down memory lane -#2: The sorrow of DRAM scaling challenge
E-Beam Lithography Resists (2)- 하버드대 CNS 나노팹에서 소자제조 – 3화
E-Beam resist – Nanofabrication at Harvard CNS – Ep2
Ion beam angle uniformity wafer mapping using TW V-curves: Ep1
Ion beam angle uniformity wafer mapping using TW V-curves: Ep2
All work © Sky Ko -
Leave a Reply