Summary
Al contaminants introduced from the SC-1 solution are responsible for the threshold voltage shift and GOI degradation after thermal treatment.
![failure analysis to resolve sc1 induced yield drop - P1](http://vonoff.com/comics/sc1-p1.jpg)
![failure analysis to resolve sc1 induced yield drop - P2](http://vonoff.com/comics/sc1-p2.jpg)
![failure analysis to resolve sc1 induced yield drop - P3](http://vonoff.com/comics/sc1-p3.jpg)
![failure analysis to resolve sc1 induced yield drop - P4](http://vonoff.com/comics/sc1-p4.jpg)
Minority carrier lifetime degradation is caused by SC-1 induced metal contamination in silicon
![failure analysis to resolve sc1 induced yield drop - P5](http://vonoff.com/comics/sc1-p5.jpg)
![failure analysis to resolve sc1 induced yield drop - P6](http://vonoff.com/comics/sc1-p6.jpg)
![become a sponsor skyko comics-1-en](https://vonoff.com/comics/sponsorship-skyko-comics-2.jpg)
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