Summary Plasma process monitoring requires high speed data acquisition (>10MS/s) to detect transient changes in short DC voltage and current waveforms. Very … [Read more...] about NI-Diadem for plasma doping process monitoring
Implantation
Implantation related technology
Plasma doping process issues
Summary Some development issues related to plasma doping for mass production are plasma uniformity, particle and micro-arcs control. … [Read more...] about Plasma doping process issues
3D C-V measurement to detect slow traps
Summary The 3D C-V technique is a simple method to measure the energy and concentration profile of the slow traps located in the oxide near the Si-SiO 2 … [Read more...] about 3D C-V measurement to detect slow traps
Mapping wafer temperature spatial distribution
Summary A custom-made probe wafer with RTD sensor provides wafer temperature spatial distribution map by measuring transient temperature distribution in a … [Read more...] about Mapping wafer temperature spatial distribution
Conformal Doping Test Structure for PLAD process qualification
Summary Test structure method to probe doping conformality enables the automated measurement of nano-scale sidewall electrical depth profile and provides a wafer … [Read more...] about Conformal Doping Test Structure for PLAD process qualification
Implant damage control and junction leakage measurement
Summary Wafer temperature during implantation has a significant effect on the amorphous layer thickness and EOR damage that affects junction leakage current. … [Read more...] about Implant damage control and junction leakage measurement
Test Structures to measure the Implant Beam Angle for accurate beam control
Summary Beam angle information from nanoscale electrical test structure can provide high resolution wafer maps of the horizontal and vertical incident beam angle … [Read more...] about Test Structures to measure the Implant Beam Angle for accurate beam control