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Nanofabrication at Harvard CNS : E-beam resist – Ep1( Getting ready)

April 25, 2018 By sky Leave a Comment

Summary Migration toward next nod scaling of semiconductor device forces the equipment manufactures to develop new process technology to meet the more stringent … [Read more...] about Nanofabrication at Harvard CNS : E-beam resist – Ep1( Getting ready)

Filed Under: Comics, nanofabrication, Nanotechnology Tagged With: alignment marks, E-beam resist, Harvard CNS, nanofabrication, prototyping

하버드대 CNS 나노팹에서 소자제조 – Ep1
(Getting ready)

April 24, 2018 By sky Leave a Comment

Summary 차세대 반도체소자 개발은 새로운 공정기술의 요구와 더불어 반도체 장비의 기술 개발을 유도하는데 새롭게 개발된 기술의 성능평가를 위해 맟춤형 test structure의 제작이 요구된다. Prototype structure의 Nanofabrication을 위해 … [Read more...] about 하버드대 CNS 나노팹에서 소자제조 – Ep1
(Getting ready)

Filed Under: Comics, nanofabrication, Nanotechnology Tagged With: Harvard CNS, nanofabrication, prototyping, 나노팹, 하버드대 CNS

기억을 쫓아서-#3 – DRAM 새로운 3D power scaling 시대로

December 1, 2017 By sky Leave a Comment

Summary 저항변화를 이용하는 차세대메모리인 STT-MRAM/PCRAM/ReRAM가 개발되고 있는 가운데 DRAM은 새로운 3D power scaling 시대로 나아갈 희망을 갖는다. select language: … [Read more...] about 기억을 쫓아서-#3 – DRAM 새로운 3D power scaling 시대로

Filed Under: Comics, Memory technology, Nanotechnology Tagged With: 3d power scaling, capacitor, DRAM, dram transistor evolution, D램, emerging memory, Moore's law 3.0, pcram, reram, stt-mram, 공정미세화 한계, 무어의법칙, 차세대메모리

기억을 쫓아서-#1 – CPU와 메모리간 병목현상 극복

December 1, 2017 By sky Leave a Comment

Summary CPU와 메모리는 서로 다른 목표를 가지고 발전해왔기때문에 속도차로 인한 병목현상이 심각한 문제가 된다. 이문제를 해결하기 위해 새로운 메모리들을 사용하게 되는데 과연 만족할만큼 속도차를 줄일 수 있을까요? select language: … [Read more...] about 기억을 쫓아서-#1 – CPU와 메모리간 병목현상 극복

Filed Under: Comics, Memory technology, Nanotechnology Tagged With: DRAM, Flash, Latency gap, Memory heirarchy, Memory wall, NVMe SSD, SRAM, 디램, 메모리, 메모리 계층도, 캐시메모리

기억을 쫓아서-#2 – 새로운 차세대메모리 등장

December 1, 2017 By sky Leave a Comment

Summary 차세대메모리가 DRAM과 NAND를 대체할것으로 주목받고 있는데 Intel과 Micron이 공동개발한 새로운 메모리인 3D-Xpoint을 발표한다. 물리적 한계에 직면할 DRAM 마음은 착찹해지는데... select language: … [Read more...] about 기억을 쫓아서-#2 – 새로운 차세대메모리 등장

Filed Under: Comics, Memory technology, Nanotechnology Tagged With: 3D-VNAND, 3D-Xpoint, DRAM, DRAM capacitor, DRAM scaling limit, memory, universial memory, 디램, 디램 공정미세화 한계, 메모리

A trip down memory lane -#3 : DRAM vs. emerging memories

November 29, 2017 By sky Leave a Comment

Summary The resistance-based non-volatile memories(NVM), PCRAM, STT-MRAM and ReRAM are introduced to the memory heirarchy and DRAM will take a path to a new era … [Read more...] about A trip down memory lane -#3 : DRAM vs. emerging memories

Filed Under: Comics, Memory technology, Nanotechnology Tagged With: 3d power scaling, BCAT, capacitor, DRAM, Moore's law 3, pcram, RCAT, reram, SRCAT, stt-mram, VCAT

A trip down memory lane -#2: The sorrow of DRAM scaling challenge

November 25, 2017 By sky

Summary DRAM finds itself in a corner as newer and more advanced memories start to emerge. Can DRAM overcome its physical scaling limit and stay relevant? … [Read more...] about A trip down memory lane -#2: The sorrow of DRAM scaling challenge

Filed Under: Comics, Memory technology, Nanotechnology Tagged With: 3D-VNAND, 3D-Xpoint, DRAM capacitor process challenge, DRAM scaling limit, ideal memory, universial memory, 디램 공정미세화 한계, 차세대메모리

A trip down memory lane -#1: Memory to reduce latency gap

November 25, 2017 By sky Leave a Comment

Summary Processors and memory have always differed in priorities, creating an ever-increasing latency gap. New memory types have been introduced to bridge this … [Read more...] about A trip down memory lane -#1: Memory to reduce latency gap

Filed Under: Comics, Memory technology, Nanotechnology Tagged With: Cache memory, data retention, DRAM, Latency gap, Memory heirarchy, Memory wall, NAND flash, NVMe SSD, SRAM, SSD, 병목현상, 캐시메모리

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