Semiconductor Comics Nano-Technology 3D C-V technique A simple method to characterize slow traps and oxide charges 3D capacitance-voltage curves to diagnose visually slow traps of MOS capacitor Things to know before tool trainingE-beam lithography basics-Ep2: Minimizing stitching errors Things to know before doing E-Beam lithography at Harvard CNS: Stitching errors Things to know before tool trainingE-beam lithography basics:Ep1 Things to know before doing E-Beam lithography at Harvard CNS: Ep1 How to veryify ion beam angle accuracyHigh resolution micro-uniformity map of beam angle provides beam angle detailsEp.2 High resolution ion beam angle uniformity wafer mapping by using thermal wave-Ep2 Ion beam angle performance monitoringHow to create high resolution beam angle uniformity mapEp.1 High resolution ion beam angle uniformity wafer mapping by using thermal wave-Ep1: TW measurement theory Plasma doping induced arcingThe influence of surface structure and micro-arcing detection Impact of wafer surface structure on plasma induced micro-arcing Plasma wafer arcingTest structure sensitivity to plasma induced wafer arcing wafer level test structure sensitivity to plasma doping induced wafer arcing How to monitor plasma doping processHigh speed data acquisition and large data analysis Monitoring plasma ion implantation systems for fault detection and process control Dose accuracyIs dosimetry dose same as retained dose in plasma doping? Plasma-doping-dose-accuracy PLAD .vs BeamlineDrawbacks and advantages Plasma doping advantages over beamline Electrical measurementElectrical measurement with parameter analyzer used for device and process characterization Semiconductor parameter analyzers for device and process characterization E-Beam resist(2) Understand the characteristics of E-beam resists first for successful EBL Nanofabrication at Harvard CNS (E-beam resists-2) – Ep3 E-Beam resist Comparison of E-beam resists, Zep520A and PMMA Nanofabrication at Harvard CNS (E-beam resists) – Ep2 Prototyping Getting ready Nanofabrication at Harvard CNS (Getting ready) -Ep1 기억을 쫓아서.. Ep3 (EN,KR) A trip down memory lane – #3 기억을 쫓아서.. Ep2 (EN,KR) A trip down memory lane – #2 기억을 쫓아서.. Ep1 (EN,KR) A trip down memory lane -#1 Lithography Trends What has happened to force the lithography roadmap accelerate? Optical Lithography Trends Implant damage controlEffect of cold and cluster implantation on junction leakage Cold & cluster ion implantation Implant beam angle control Test structure for beam angle measurement Implant Beam Angle Test Structures Test structure method to probe doping conformality Automated measurement of nano-scale sidewall electrical depth profile Conformal Doping Test Structure Cold implantation wafer temperature uniformity A custom-made probe wafer to map wafer temperature spatial distribution Wafer temperature measurement SC1 wet clean effectSC1 clean induced device yield drop Effect of surface wet clean on device yield PLAD development Key process issues with PLAD Plasma Doping High speed data acquisition In-situ monitoring for fault detection using NI-Diadem Process characterization with Diadem Electrical measurementsemiconductor device and process characterization Semiconductor electrical measurement
